Part Number Hot Search : 
LG122324 D40F120 B230006 AN470 XXXSP ACS401 035CT DTC11
Product Description
Full Text Search

HYE18P16161AC-L70 - 16M Asynchronous/Page CellularRAM 1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 PLASTIC, VFBGA-48

HYE18P16161AC-L70_3749959.PDF Datasheet


 Full text search : 16M Asynchronous/Page CellularRAM 1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 PLASTIC, VFBGA-48


 Related Part Number
PART Description Maker
HYB31645400ATL HYB3165400AJ-40 HYB3164400AJ-40 HYB 16M x 4-Bit Dynamic RAM
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD 0 to 70
16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32
Siemens Semiconductor Group
SIEMENS AG
Infineon Technologies AG
STI916100-60GOI STI916100-80TOH STI916100-70GPS ST 16M X 9 FAST PAGE DRAM MODULE, 60 ns, SMA30 SIMM-30
16M X 9 FAST PAGE DRAM MODULE, 80 ns, SMA30 SIMM-30
16M X 9 FAST PAGE DRAM MODULE, 70 ns, SMA30 SIMM-30
KODENSHI, CORP.
3M Company
K4F640412D K4F660412D 16M x 4bit CMOS Dynamic RAM with Fast Page Mode
SAMSUNG[Samsung semiconductor]
KM44C16000B KM44C16100B 16M x 4bit CMOS Dynamic RAM with Fast Page Mode
Samsung semiconductor
MX23L25611 MX23L25611MC-12 23L25611-10 23L25611-12 256M-BIT (16M x 16 / 32M x 8) MASK ROM WITH PAGE MODE (SSOP ONLY)
MXIC
MCNIX[Macronix International]
GM71C16163CCL GM71S16163CCL GM71CS16400CLJ-6 GM71C 1Mx16|5V|4K|5/6|FP/EDO DRAM - 16M
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
Electronic Theatre Controls, Inc.
Rochester Electronics, LLC
Integrated Silicon Solution, Inc.
UPD4216805LE-60 UPD4216805LE-50 UPD4216805LE-70 16M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT, HYPER PAGE MODE
NEC
GM71V17400CT-6 GM71V17400CCL x4 Fast Page Mode DRAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M

MH8M36CNJ-6 MH4M365CXJ-6 MH16M36BJ-6 8M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72 SIMM-72
4M X 36 MULTI DEVICE DRAM MODULE, 60 ns, DMA72
16M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
Qimonda AG
KMM366F1600BK3 KMM366F1680BK3 16M x 64 DRAM DIMM(16M x 64 动RAM模块)
16M x 64 DRAM DIMM(16M x 64 ?ㄦ?RAM妯″?)
SAMSUNG SEMICONDUCTOR CO. LTD.
MX25L1605ZM MX25L1605ZMC-20 MX25L1605ZMC-20G MX25L 16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY 16M X 1 FLASH 2.7V PROM, DSO8
Macronix International Co., Ltd.
 
 Related keyword From Full Text Search System
HYE18P16161AC-L70 Module HYE18P16161AC-L70 rohm HYE18P16161AC-L70 Clock HYE18P16161AC-L70 rectifier HYE18P16161AC-L70 gate threshold
HYE18P16161AC-L70 battery charger circuit HYE18P16161AC-L70 number HYE18P16161AC-L70 Specification HYE18P16161AC-L70 enhancement HYE18P16161AC-L70 terminals description
 

 

Price & Availability of HYE18P16161AC-L70

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.59176683425903